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Freescale Semiconductor Technical Data
Document Number: MRF8P9300H Rev. 0, 11/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.6 19.6 19.4 hD (%) 35.4 35.6 35.8 Output PAR (dB) 6.0 6.0 5.9 ACPR (dBc) - 37.3 - 37.1 - 36.7
MRF8P9300HR6 MRF8P9300HSR6
920 - 960 MHz, 100 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 425 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness * Typical Pout @ 1 dB Compression Point ] 326 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate-Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * Optimized for Doherty Applications * RoHS Compliant * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
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CASE 375D - 05, STYLE 1 NI - 1230 MRF8P9300HR6
CASE 375E - 04, STYLE 1 NI - 1230S MRF8P9300HSR6
RFinA/VGSA 3
1 RFoutA/VDSA
Table 1. Maximum Ratings
Rating Symbol VDSS VGS VDD Tstg TC
(1,2)
Value - 0.5, +70 - 6.0, +10 32, +0 - 65 to +150 150 225
Unit Vdc Vdc Vdc C C C Value (2,3) 0.22 0.20 (Top View) RFinB/VGSB 4 2 RFoutB/VDSB
Drain- Source Voltage Gate- Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
Figure 1. Pin Connections
TJ
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 75C, 100 W CW, 28 Vdc, IDQ = 2400 mA Case Temperature 80C, 300 W CW, 28 Vdc, IDQ = 2400 mA Symbol RJC Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2009. All rights reserved.
MRF8P9300HR6 MRF8P9300HSR6 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol IDSS IDSS IGSS
Min -- -- --
Typ -- -- --
Max 10 1 1
Unit Adc Adc Adc
Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 400 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, IDQ = 2400 mA, Measured in Functional Test) Drain- Source On - Voltage (1) (VGS = 10 Vdc, ID = 3 Adc)
VGS(th) VGS(Q) VDS(on)
1.5 2.3 0.1
2.3 3.1 0.2
3 3.8 0.3
Vdc Vdc Vdc
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2400 mA, Pout = 100 W Avg., f = 960 MHz, Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 18.0 32.0 5.6 -- -- 19.4 35.8 5.9 - 36.7 - 16 21.0 -- -- - 34.0 - 10 dB % dB dBc dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2400 mA, Pout = 100 W Avg., Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. www..com Gps hD Output PAR ACPR IRL (dB) (dBc) (dB) (dB) (%) Frequency 920 MHz 940 MHz 960 MHz 1. Each side of device measured separately. 2. Part internally matched both on input and output. (continued) 19.6 19.6 19.4 35.4 35.6 35.8 6.0 6.0 5.9 - 37.3 - 37.1 - 36.7 -9 - 12 - 16
MRF8P9300HR6 MRF8P9300HSR6 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 310 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 40 MHz Bandwidth @ Pout = 100 W Avg. Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol P1dB IMDsym Min -- -- Typ 326 17 Max -- -- Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2400 mA, 920 - 960 MHz Bandwidth
VBWres GF G P1dB
-- -- -- --
30 0.16 0.012 0.008
-- -- -- --
MHz dB dB/C dBm/C
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MRF8P9300HR6 MRF8P9300HSR6 RF Device Data Freescale Semiconductor 3
B2 C21 C17 C15 C49 C43 C47 C45
C53
C51 C19 C13* C3 C5 C4 C1 C2 C6 C10* C11* C18 C20 C16 C14 C42 C46 C44 C48 B1 C7 C12* C9 CUT OUT AREA C8 C38 C36 C40 C26 C32 C50 MRF8P9300H Rev. 2 C34 C41 C37 C39 C35 C31 C29 C30 C28 C24 C25 C23 C22 C33 C27
C52
*C10, C11, C12, and C13 are mounted vertically.
Figure 2. MRF8P9300HR6(HSR6) Test Circuit Component Layout Table 5. MRF8P9300HR6(HSR6) Test Circuit Component Designations and Values
Part B1, B2 www..com C1 C2, C3, C16, C17, C26, C27 C4, C5, C28, C29, C32, C33, C34, C35 C6, C7 C8, C9 C10, C11, C12, C13 C14, C15, C42, C43 C18, C19 C20, C21 C22, C23 C24, C25 C30, C31 C36, C37 C38, C39 C40, C41 C44, C45 C46, C47 C48, C49, C50, C51 C52, C53 PCB Description Short RF Bead 0.2 pF Chip Capacitor 39 pF Chip Capacitors 1.1 pF Chip Capacitors 2.7 pF Chip Capacitors 5.1 pF Chip Capacitors 3.0 pF Chip Capacitors 10 pF Chip Capacitors 2.2 F, 50 V Chip Capacitors 47 F, 50 V Electrolytic Capacitors 1.0 pF Chip Capacitors 0.5 pF Chip Capacitors 0.8 pF Chip Capacitors 4.7 pF Chip Capacitors 4.3 pF Chip Capacitors 11 pF Chip Capacitors 20 pF Chip Capacitors 30 pF Chip Capacitors 10 F, 50 V Chip Capacitors 470 F, 63 V Electrolytic Capacitors 0.030, r = 3.50 Part Number 2743019447 ATC100B0R2BT500XT ATC100B390JT500XT ATC100B1R1BT500XT ATC100B2R7BT500XT ATC100B5R1CT500XT ATC100B3R0CT500XT ATC100B100JT500XT C1825C225J5RAC- TU 476KXM050M ATC100B1R0BT500XT ATC100B0R5BT500XT ATC100B0R8BT500XT ATC100B4R7CT500XT ATC100B4R3CT500XT ATC100B110JT500XT ATC100B200JT500XT ATC100B300JT500XT GRM55DR61H106KA88L MCGPR63V477M13X26- RH RF - 35 Manufacturer Fair- Rite ATC ATC ATC ATC ATC ATC ATC Kemet Illinois Capacitor ATC ATC ATC ATC ATC ATC ATC ATC Murata Multicomp Taconic
MRF8P9300HR6 MRF8P9300HSR6 4 RF Device Data Freescale Semiconductor
Devices are tested in a parallel configuration
Single-ended
l 4
l 4
Quadrature combined
l 4
Doherty
l 2
l 2
Push-pull
Figure 3. Possible Circuit Topologies
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MRF8P9300HR6 MRF8P9300HSR6 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 20 Gps 19 Gps, POWER GAIN (dB) 18 17 16 PARC 15 14 820 ACPR 840 860 880 900 920 940 960 -35 -40 980 IRL D 40 VDD = 28 Vdc, Pout = 100 W (Avg.), IDQ = 2400 mA 30 Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% 20 Probability on CCDF -30 50
0 ACPR (dBc) -10 -20 -30
IRL, INPUT RETURN LOSS (dB)
0 -1 -2 -3 PARC (dB)
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 100 Watts Avg.
-10 VDD = 28 Vdc, Pout = 310 W (PEP), IDQ = 2400 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz IM3-U -30 IM5-U -40 IM5-L IM3-L
IMD, INTERMODULATION DISTORTION (dBc)
-20
-50 IM7-L 1
IM7-U
-60
10 TWO-TONE SPACING (MHz)
100
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Figure 5. Intermodulation Distortion Products versus Two - Tone Spacing
21 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 20 1 0 -1 -2 -3 dB = 155.2 W -3 -4 -5 45 -2 dB = 110.0 W PARC VDD = 28 Vdc, IDQ = 2400 mA, f = 940 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 65 85 105 125 145 165 185 10 0 205 20 -1 dB = 80.0 W D -20 -25 -30 -35 -40 -45 -50 ACPR (dBc)
60 50
19 18 17 16 15
ACPR 40 Gps 30
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
MRF8P9300HR6 MRF8P9300HSR6 6 RF Device Data Freescale Semiconductor
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
21 20 Gps, POWER GAIN (dB) 19 18 17 16 15 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. f = 920 MHz Gps 940 MHz VDD = 28 Vdc, IDQ = 2400 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 960 MHz ACPR 960 MHz 940 MHz D 60 50 D, DRAIN EFFICIENCY (%) 40 30 20 920 MHz 10 0 400 0 -10 -20 -30 -40 -50 -60 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 1.8 3.6
Figure 7. Single - Carrier W - CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
25 20 15 GAIN (dB) 10 5 IRL 0 -5 -10 -15 600 VDD = 28 Vdc Pin = 0 dBm IDQ = 2400 mA 700 800 900 1000 1100 -10 -15 -20 -25 1200 Gain 15 10 5 0 -5 IRL (dB) 3.84 MHz Channel BW 0
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
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W - CDMA TEST SIGNAL
10 0
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 1 2 3 4 5 6 7 8 9 10
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -9 -7.2 -5.4 -3.6 -1.8 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW
PEAK-TO-AVERAGE (dB)
Figure 9. CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal
Figure 10. Single - Carrier W - CDMA Spectrum MRF8P9300HR6 MRF8P9300HSR6 RF Device Data Freescale Semiconductor 7
VDD = 28 Vdc, IDQA = IDQB = 1200 mA, Pout = 100 W Avg. f MHz 840 860 880 900 920 Zsource W 1.74 - j1.71 1.74 - j1.42 1.59 - j1.19 1.46 - j0.91 1.51 - j0.63 Zload W 0.98 - j0.97 0.95 - j0.95 0.92 - j0.92 0.90 - j0.90 0.87 - j0.87
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 11. Series Equivalent Source and Load Impedance
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MRF8P9300HR6 MRF8P9300HSR6 8 RF Device Data Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1200 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 58 57 Pout, OUTPUT POWER (dBm) 56 55 54 53 52 51 50 49 48 47 27 28 29 30 31 32 33 34 35 36 37 38 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 920 940 960 P1dB Watts 229 214 219 dBm 53.6 53.3 53.4 f = 940 MHz f = 920 MHz f = 960 MHz Actual Ideal
Test Impedances per Compression Level f (MHz) 920 940 960 P1dB P1dB P1dB Zsource 1.58 - j2.40 1.77 - j3.02 1.98 - j3.46 Zload 0.84 - j1.69 0.76 - j1.90 0.75 - j1.51
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Figure 12. Pulsed CW Output Power versus Input Power @ 28 V
NOTE: Measurement made on a per side basis.
MRF8P9300HR6 MRF8P9300HSR6 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
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MRF8P9300HR6 MRF8P9300HSR6 10 RF Device Data Freescale Semiconductor
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MRF8P9300HR6 MRF8P9300HSR6 RF Device Data Freescale Semiconductor 11
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MRF8P9300HR6 MRF8P9300HSR6 12 RF Device Data Freescale Semiconductor
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MRF8P9300HR6 MRF8P9300HSR6 RF Device Data Freescale Semiconductor 13
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Nov. 2009 * Initial Release of Data Sheet Description
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MRF8P9300HR6 MRF8P9300HSR6 14 RF Device Data Freescale Semiconductor
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MRF8P9300HR6 MRF8P9300HSR6
Document Number: RF Device Data MRF8P9300H Rev. 0, 11/2009 Freescale Semiconductor
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